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IRFI9610G, SiHFI9610G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 13 3.2 7.3 Single
S
FEATURES
* Isolated Package * High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) * Sink to Lead Creepage Distance = 4.8 mm * P-Channel * Dynamic dV/dt Rating * Low Thermal Resistance * Lead (Pb)-free Available
Available
3.0
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
G
GDS
D P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI9640GPbF SiHFI9640G-E3 IRFI9640G SiHFI9640G
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT - 200 20 - 2.0 - 1.3 - 8.0 0.22 100 - 2.0 2.7 27 - 11 - 55 to + 150 300d 10 1.1 UNIT V
A W/C mJ A mJ W V/ns C lbf * in N*m
TC = 25 C
for 10 s 6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 51 mH, RG = 25 , IAS = - 2.0 A (see fig. 12). c. ISD - 2.0 A, dI/dt - 250 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91165 S-Pending-Rev. A, 16-Jun-08 www.vishay.com 1
WORK-IN-PROGRESS
IRFI9610G, SiHFI9610G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 65 4.6 UNIT C/W
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = - 250 A Reference to 25 C, ID = - 1 mA VDS = VGS, ID = - 250 A VGS = 20 V VDS = - 200 V, VGS = 0 V VDS = - 160 V, VGS = 0 V, TJ = 125 C VGS = - 10 V ID = - 1.2 Ab Ab VDS = - 50 V, ID = - 1.2
- 200 - 2.0 0.7
- 0.22 -
- 4.0 100 - 100 - 500 3.0 -
V V/C V nA A S
VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5
-
180 66 12 12 17 19 15 4.5 7.5
13 3.2 7.3 nH ns nC pF
VGS = - 10 V
ID = - 2.0 A, VDS = - 160 V, see fig. 6 and 13b
-
VDD = - 100 V, ID = - 2.0 A, RG = 24 , VGS = - 10 V, see fig. 10b
-
Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
-
130 700
- 2.0 A - 8.0 - 5.8 200 1050 V ns C
G
S
TJ = 25 C, IS = - 2.0 A, VGS = 0
Vb
TJ = 25 C, IF = - 2.0 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.
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Document Number: 91165 S-Pending-Rev. A, 16-Jun-08
IRFI9610G, SiHFI9610G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
10
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
TJ = 25C
-I D, Drain-to-Source Current ( )
-I D, Drain-to-Source Current (A)
T J = 150C
1
-4.5V
0.1
1
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
0
VDS = -50V 20s PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0
10
100
-VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 C
-VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics
10
TOP
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
1
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V
2.5
ID = -2.0A VGS = -10V
2.0
(Normalized)
-4.5V
0.1
1.5
1.0
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 C
T J , Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91165 S-Pending-Rev. A, 16-Jun-08
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IRFI9610G, SiHFI9610G
Vishay Siliconix
400 350 300
10.0
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd SHORTED
-I SD, Reverse Drain Current (A)
T J = 150C
C, Capacitance (pF)
250 200 150
Ciss
1.0 TJ = 25C
Coss
100 50 0 1 10 100
Crss
0.1 0.0 1.0 2.0 3.0
VGS = 0V 4.0 5.0
-VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
-VSD, Source-toDrain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID= -2.0A
100
VDS= -160V VDS= -100V VDS= -40V
-V GS, Gate-to-Source Voltage (V)
16
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10
12
100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 10 100 -VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
8
4
FOR TEST CIRCUIT SEE FIGURE 13
10msec
0 0 2 4 6 8 10 12 14 Q G Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
0.1
1000
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Document Number: 91165 S-Pending-Rev. A, 16-Jun-08
IRFI9610G, SiHFI9610G
Vishay Siliconix
RD
2.0
VGS
VDS
D.U.T. + - VDD
1.6
RG
-ID , Drain Current (A)
10 V
1.2
Pulse width 1 s Duty factor 0.1 %
0.8
Fig. 10a - Switching Time Test Circuit
VDS
0.4
90 %
0.0 25 50 75 100 125 150
10 % VGS td(on) tr td(off) tf
T J , Junction Temperature (C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.02
0.1
0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
VDS
IAS
+ Driver 0.01 15 V D.U.T. IAS VDD A
RG
- 20 V
tp
tp VDS
Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5
Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91165 S-Pending-Rev. A, 16-Jun-08
IRFI9610G, SiHFI9610G
Vishay Siliconix
240
EAS, Single Pulse Avalanche Energy (mJ)
200
ID -0.9A -1.3A BOTTOM -2.0A
TOP
160
120
80
40
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 k
12 V
- 10 V QGS
QG
0.2 F
0.3 F
VG
VGS
- 3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91165 S-Pending-Rev. A, 16-Jun-08
+
D.U.T.
-
QGD
VDS
IRFI9610G, SiHFI9610G
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
P.W. Period Ripple 5 %
D.U.T.
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
RG
Compliment N-Channel of D.U.T. for driver
Driver gate drive D=
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage Inductor current
Body diode forward drop
*
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91165.
Document Number: 91165 S-Pending-Rev. A, 16-Jun-08
+ + * dV/dt controlled by RG * ISD controlled by duty factor "D" * D.U.T. - device under test
+ - VDD
P.W. Period VGS = - 10 V*
VDD
ISD
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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